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THE LATTICE SITES OF CARBON AND HYDROGEN INCORPORATED IN GAAS GROWN BY MOVPE REVEALED BY INFRARED-SPECTROSCOPY

被引：30
作者：
WOODHOUSE, K
NEWMAN, RC
NICKLIN, R
BRADLEY, RR
SANGSTER, MJL
机构：
[1] GEC LTD,MARCONI MAT TECHNOL LTD CASWELL,TOWCESTER NN12 8EQ,NORTHANTS,ENGLAND
[2] UNIV READING,JJ THOMSON PHYS LAB,READING RG6 2AF,BERKS,ENGLAND
来源：
JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(92)90411-B
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Infrared absorption due to the localized vibrational modes in carbon doped GaAs and Al0.02Ga0.98As has been investigated and classified for C(As), C(As)-Al(Ga) nearest neighbour pairs and H-C(As) passivated pairs. The assignment of a line at 563 cm-1 is still unclear: it could be due to C(Ga) donors or a mode of H-C(As) pairs. There is no evidence for the presence of interstitial carbon.
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收藏
页码：323 / 327
页数：5
相关论文
共 18 条
[1]   ULTRAHIGH DOPING OF GAAS BY CARBON DURING METALORGANIC MOLECULAR-BEAM EPITAXY [J].
ABERNATHY, CR ;
PEARTON, SJ ;
CARUSO, R ;
REN, F ;
KOVALCHIK, J .
APPLIED PHYSICS LETTERS, 1989, 55 (17) :1750-1752
[2]  
BROZEL MR, 1986, APPL PHYS LETT, V49, P339
[3]   HIGH-CARBON DOPING OF ALXGA1-XAS(0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) BY ATOMIC LAYER EPITAXY FOR DEVICE APPLICATIONS [J].
CHUNG, BC ;
GREEN, RT ;
MACMILLAN, HF .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :89-95
[4]   ELECTRONIC LEVEL OF INTERSTITIAL HYDROGEN IN GAAS [J].
CLERJAUD, B ;
GENDRON, F ;
KRAUSE, M ;
ULRICI, W .
PHYSICAL REVIEW LETTERS, 1990, 65 (14) :1800-1803
[5]  
CLERJAUD B, 1992, 16TH P INT C DEF SEM, P563
[6]  
DELYON TJ, 1990, APPL PHYS LETT, V56, P2561
[7]   CARBON DOPING EXCEEDING 1020CM-3 IN GAAS GROWN BY AP-MOVPE [J].
HANNA, MC ;
LU, ZH ;
MAO, EW ;
MCCORMICK, T ;
OH, EG ;
MAJERFELD, A ;
SZMYD, DM .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :279-280
[8]   QUANTITATIVE-ANALYSIS OF CARBON IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS [J].
HOMMA, Y ;
ISHII, Y ;
KOBAYASHI, T ;
OSAKA, J .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2931-2935
[9]  
JONES R, 1992, 16TH P INT C DEF SEM, P551
[10]  
KOSUCH DM, 1990, APPL PHYS LETT, V57, P2561
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