INTERDIFFUSION AND PHASE-FORMATION DURING THERMAL-PROCESSING OF CO/TI/SI(100) STRUCTURES

被引：6

作者：

CARDENAS, J

HATZIKONSTANTINIDOU, S

ZHANG, SL

SVENSSON, BG

PETERSSON, CS

机构：

[1] Royal Institute of Technology, Solid State Electronics, Stockholm, S-164 40, Electrum 229, Kista

来源：

PHYSICA SCRIPTA | 1994年 / 54卷

关键词：

D O I：

10.1088/0031-8949/1994/T54/049

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Rapid thermal processing of Co/Ti/Si(100) structures has been investigated over a wide temperature range, from 300 degrees C to 1100 degrees C. Titanium and cobalt layers, 10nm and 20nm thick respectively, were consecutively deposited on Si(100) substrates using an e-beam evaporator. X-ray diffraction, Secondary Ion Mass Spectrometry and Rutherford Backscattering Spectrometry were employed to analyse interdiffusion and phase formations. The present results revealed the formation of CoSi2 when annealing at 750 degrees C. The CoSi, was formed epitaxially and yielded a minimum channelling yield of approximately 8.5% for layers annealed at 1100 degrees C. Evidence for the presence of a CoSi layer, when annealing between 650 degrees C and 800 degrees C, is presented.

引用

页码：198 / 201

页数：4

共 15 条

[11]

NICOLET MA, 1983, VLSI ELECTRONICS MIC, V6, P402

[12] SILICIDE FORMATION FOR CO/TI/SI STRUCTURES PROCESSED BY RTP UNDER VACUUM [J].