THE GROWTH OF CDHGTE USING THE INTERDIFFUSED MULTILAYER PROCESS AT REDUCED TEMPERATURES

被引：10

作者：

THOMPSON, J

MACKETT, P

SMITH, LM

机构：

来源：

MATERIALS LETTERS | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1016/0167-577X(87)90078-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：72 / 74

页数：3

共 8 条

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BEVAN, MJ ;

WOODHOUSE, KT .

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[2] HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS [J].

GHANDHI, SK ;

BHAT, I .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :779-781

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HOKE, WE ;

TRACZEWSKI, R .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5087-5089

[4] METALORGANIC GROWTH OF CDTE AND HGCDTE EPITAXIAL-FILMS AT A REDUCED SUBSTRATE-TEMPERATURE USING DIISOPROPYLTELLURIDE [J].

HOKE, WE ;

LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :398-400

[5] METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION OF MERCURY CADMIUM TELLURIDE EPITAXIAL-FILMS [J].

HYLIANDS, MJ ;

THOMPSON, J ;

BEVAN, MJ ;

WOODHOUSE, KT ;

VINCENT, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2217-2225

[6] THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE [J].

IRVINE, SJC ;

MULLIN, JB .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :107-115

[7] A NEW MOVPE TECHNIQUE FOR THE GROWTH OF HIGHLY UNIFORM CMT [J].

TUNNICLIFFE, J ;

IRVINE, SJC ;

DOSSER, OD ;

MULLIN, JB .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :245-253

[8]

1986, ALFA PRODUCTS ORGANO

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