CHEMICAL-ANALYSIS OF SURFACE BY FLUORESCENT X-RAY SPECTROSCOPY USING RHEED-SSD METHOD

被引：49

作者：

INO, S

ICHIKAWA, T

OKADA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 08期

关键词：

D O I：

10.1143/JJAP.19.1451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1451 / 1457

页数：7

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[1] RHEED OBSERVATION OF THE SI(111)(SQUARE-ROOT-31XSQUARE-ROOT-31)R+ -9-DEGREES-IN STRUCTURE
AIYAMA, T
INO, S
[J]. SURFACE SCIENCE, 1979, 82 (02) : L585 - L588
[2] Castaing R, 1960, ADV ELECTRONICS ELEC, V13, P317, DOI [DOI 10.1016/S0065-2539(08)60212-7, 10.1016/S0065-2539(08)60212-7]
[3] SURFACE-STRUCTURES OF AG ON SI(111) SURFACE INVESTIGATED BY RHEED
GOTOH, Y
INO, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (12) : 2097 - 2109
[4] DOUBLE DIFFRACTION SPOTS IN RHEED PATTERNS FROM CLEAN GE(111) AND SI(001) SURFACES
ICHIKAWA, T
INO, S
[J]. SURFACE SCIENCE, 1979, 85 (02) : 221 - 243
[5] GE(111) 7 X 7 SURFACE-STRUCTURE INDUCED BY SN
ICHIKAWA, T
INO, S
[J]. SOLID STATE COMMUNICATIONS, 1978, 27 (04) : 483 - 486
[6] RECOVERY PROCESSES OF SI (111) AND GE (111) SURFACES DAMAGED BY ARGON ION-BOMBARDMENT
ICHIKAWA, T
INO, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (09) : 1675 - 1676
[7] SOME NEW TECHNIQUES IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) APPLICATION TO SURFACE-STRUCTURE STUDIES
INO, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (06) : 891 - 908
[8] RHEED STUDY OF SI(111) SURFACE-STRUCTURES INDUCED BY AG EVAPORATION
INO, S
GOTOH, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (12) : 2261 - 2262
[9] A NEW STRUCTURE MODEL FOR THE SI(111) 7X7 SURFACE-STRUCTURE
INO, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L61 - L64
[10] SOME NEW DIFFRACTION PHENOMENA IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OF CLEAN SILICON(III) SURFACES
INO, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) : 1121 - 1122