RECOVERY PROCESSES OF SI (111) AND GE (111) SURFACES DAMAGED BY ARGON ION-BOMBARDMENT

被引：10

作者：

ICHIKAWA, T

INO, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 09期

关键词：

D O I：

10.1143/JJAP.17.1675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1675 / 1676

页数：2

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[1] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS
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[6] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON
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