FAR-INFRARED STUDIES IN EPITAXIAL-FILMS OF 3-5 AND 4-6 SEMICONDUCTORS

被引:16
作者
AMIRTHARAJ, PM [1 ]
BEAN, BL [1 ]
PERKOWITZ, S [1 ]
机构
[1] EMORY UNIV,DEPT PHYS,ATLANTA,GA 30322
关键词
D O I
10.1364/JOSA.67.000939
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:939 / 942
页数:4
相关论文
共 23 条
[11]   PLASMON-OPTICAL PHONON COUPLED MODES LOCALIZED AT INTERFACE BETWEEN IONIC-CRYSTAL AND DEGENERATE SEMICONDUCTOR [J].
IKARASHI, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 41 (06) :1962-1967
[12]  
KOCHNEVA NS, 1976, SOV PHYS SEMICOND, V9, P1200
[13]   LONG WAVE OPTICAL PHONONS IN ALLOY SYSTEMS - GA1-XINXAS, GAAS1-XSBX AND INAS1-XSBS [J].
LUCOVSKY, G ;
CHEN, MF .
SOLID STATE COMMUNICATIONS, 1970, 8 (17) :1397-+
[14]   GALVANOMAGNETIC MEASUREMENTS ON THIN PBSE EPITAXIAL-FILMS AS A FUNCTION OF O2 AND H EXPOSURE [J].
MCLANE, GF .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :2926-2930
[15]   EPITAXIAL DEPOSITION OF PB-XSN-1-XTE ON PB-XSN-1-XTE SUBSTRATES IN A CLOSED SYSTEM [J].
PARKER, SG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :920-924
[16]   FAR-INFRARED STUDY OF FREE CARRIERS AND PLASMON-PHONON INTERACTION IN CDTE [J].
PERKOWIT.S ;
THORLAND, RH .
PHYSICAL REVIEW B, 1974, 9 (02) :545-550
[17]   FREE CARRIERS, COUPLED MODES, AND GENERALIZED DIELECTRIC FUNCTION IN PBTE [J].
PERKOWITZ, S .
PHYSICAL REVIEW B, 1975, 12 (08) :3210-3214
[18]   CHARACTERIZATION OF GAAS BY FAR INFRARED REFLECTIVITY [J].
PERKOWITZ, S ;
BREECHER, J .
INFRARED PHYSICS, 1973, 13 (04) :321-326
[19]   PREPARATION OF SINGLE-CRYSTAL FILMS OF PBS [J].
SCHOOLAR, RB ;
ZEMEL, JN .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1848-&
[20]   STUDY OF DIELECTRIC FUNCTION OF PBSNTE EPITAXIAL FILM BY FAR-INFRARED REFLECTIVITY [J].
TENNANT, WE ;
CAPE, JA .
PHYSICAL REVIEW B, 1976, 13 (06) :2540-2547