LASER ANNEALING OF ZINC IMPLANTED GAAS

被引:2
作者
KULAR, SS
SEALY, BJ
机构
关键词
D O I
10.1016/0038-1101(80)90105-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:875 / &
相关论文
共 6 条
[1]   COMPARISON OF ELECTRICAL PROFILES FROM HOT AND COLD IMPLANTATIONS OF ZINC IONS INTO GAAS [J].
KULAR, SS ;
SEALY, BJ ;
STEPHENS, KG .
ELECTRONICS LETTERS, 1978, 14 (01) :22-23
[2]   PULSED LASER ANNEALING OF ZINC IMPLANTED GAAS [J].
KULAR, SS ;
SEALY, BJ ;
STEPHENS, KG ;
CHICK, DR ;
DAVIS, QV ;
EDWARDS, J .
ELECTRONICS LETTERS, 1978, 14 (04) :85-87
[3]  
KULAR SS, UNPUBLISHED
[4]  
Ready J. F., 1971, EFFECTS HIGH POWER L, P73
[5]   RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].
SZE, SM ;
IRVIN, JC .
SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&
[6]  
van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1