LOW THRESHOLD CURRENT TRANSVERSE JUNCTION LASERS ON SEMI-INSULATING SUBSTRATES BY MBE

被引：6

作者：

LEE, TP ^{[1
]}

BURRUS, CA ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 13期

关键词：

D O I：

10.1049/el:19800356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：510 / 511

页数：2

共 11 条

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[2]

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APPLIED PHYSICS LETTERS, 1978, 33 (01) :38-39

[4] DOUBLE-HETEROSTRUCTURE GAAS-GAAIAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING CARRIER CROWDING [J].

LEE, CP ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :281-282

[5] GAAS-GAALAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING LATERALLY DIFFUSED JUNCTIONS [J].

LEE, CP ;

MARGALIT, S ;

URY, I ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :410-412

[6] LONGITUDINAL-MODE BEHAVIORS OF MODE-STABILIZED ALXGA1-XAS INJECTION-LASERS [J].

NAKAMURA, M ;

AIKI, K ;

CHINONE, N ;

ITO, R ;

UMEDA, J .

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[7]

SUSAKI W, 1979, OPTICAL COMM C AMSTE

[8] GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION [J].

TSANG, WT ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :293-296

[9] CW MULTIWAVELENGTH TRANSVERSE-JUNCTION-STRIPE LASERS GROWN BY MOLECULAR-BEAM EPITAXY OPERATING PREDOMINANTLY IN SINGLE-LONGITUDINAL MODES [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1980, 36 (06) :441-443

[10] SELECTIVE AREA GROWTH OF GAAS/ALXGA1-XAS MULTILAYER STRUCTURES WITH MOLECULAR-BEAM EPITAXY USING SI SHADOW MASKS [J].

TSANG, WT ;

ILEGEMS, M .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :301-304

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