ETCHING CHARACTERISTICS OF POLYSILOXANE AND APPLICATION TO MULTILAYER RESIST PROCESSES

被引：7

作者：

NAMATSU, H

YOSHIKAWA, A

机构：

[1] NTT Electrical Communications Lab, Atsugi, Jpn, NTT Electrical Communications Lab, Atsugi, Jpn

来源：

关键词：

D O I：

10.1149/1.2108353

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2118 / 2123

页数：6

共 9 条

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[3] Deguchi K., 1985, 1985 Symposium on VLSI Technology. Digest of Technical Papers, P74
[4] CHLOROMETHYLATED POLYSTYRENE AS A DRY ETCHING-RESISTANT NEGATIVE RESIST FOR SUB-MICRON TECHNOLOGY
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[6] HIGH-RESOLUTION TRILEVEL RESIST
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[7] PARASZCAK J, 1984, MAY P INT S EL ION P, P358
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