共 11 条
- [1] EPITAXIAL-GROWTH OF SILICON ON SI(001) BY SCANNING TUNNELING MICROSCOPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 195 - 200
- [2] KAWARADA H, IN PRESS PHYS REV B
- [5] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
- [6] SATO Y, 1988, 1ST P INT C NEW DIAM, P83
- [7] EPITAXIAL-GROWTH OF HIGH-QUALITY DIAMOND FILM BY THE MICROWAVE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (01): : 34 - 40
- [8] TSUGAWA K, UNPUB SURF SCI
- [9] EPITAXIALLY GROWN DIAMOND (001) 2X1/1X2 SURFACE INVESTIGATED BY SCANNING TUNNELING MICROSCOPY IN AIR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (05): : 1063 - 1066
- [10] IMAGING FRICTION TRACKS AT DIAMOND SURFACES USING REFLECTION ELECTRON-MICROSCOPY [J]. JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1991, 17 (02): : 231 - 240