EPITAXIALLY GROWN DIAMOND (001) 2X1/1X2 SURFACE INVESTIGATED BY SCANNING TUNNELING MICROSCOPY IN AIR

被引：191

作者：

TSUNO, T ^{[1
]}

IMAI, T ^{[1
]}

NISHIBAYASHI, Y ^{[1
]}

HAMADA, K ^{[1
]}

FUJIMORI, N ^{[1
]}

机构：

[1] SUMITOMO ELECT IND LTD,CTR ANALYT CHARACTERIZAT,KONOHANA KU,OSAKA 554,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 05期

关键词：

DIAMOND; EPITAXIAL GROWTH; PLASMA-ASSISTED CVD; RHEED; 2X1; STRUCTURE; STM; DIMER;

D O I：

10.1143/JJAP.30.1063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy (STM) observation was performed for the surface of diamond epitaxial film which was grown on a diamond (001) substrate by microwave plasma-assisted chemical vapor deposition (CVD). The surface was stable even in air, and it showed a reflection high-energy electron diffraction (RHEED) pattern of the 2 x 1/1 x 2 structure. Images of the atomic level corresponding to the RHEED pattern were obtained by STM in air. Significant extension of dimer rows was observed over the entire surface. Strong similarity between Si(001) grown by molecular beam epitaxy (MBE) and diamond (001) grown by CVD was shown.

引用

页码：1063 / 1066

页数：4

共 11 条

[1]

DERYAGUIN BV, 1975, J CRYST GROWTH, V31, P44

[2] CHARACTERIZATION OF CONDUCTING DIAMOND FILMS [J].

FUJIMORI, N ;

IMAI, T ;

DOI, A .

VACUUM, 1986, 36 (1-3) :99-102

[3] EPITAXIAL-GROWTH OF SILICON ON SI(001) BY SCANNING TUNNELING MICROSCOPY [J].

HAMERS, RJ ;

KOHLER, UK ;

DEMUTH, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01) :195-200

[4] RESISTIVITY OF CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS [J].

LANDSTRASS, MI ;

RAVI, KV .

APPLIED PHYSICS LETTERS, 1989, 55 (10) :975-977

[5] DIAMOND SURFACE .1. STRUCTURE OF CLEAN SURFACE AND INTERACTION WITH GASES AND METALS [J].

LURIE, PG ;

WILSON, JM .

SURFACE SCIENCE, 1977, 65 (02) :453-475

[6] VAPOR-DEPOSITION OF DIAMOND PARTICLES FROM METHANE [J].

MATSUMOTO, S ;

SATO, Y ;

KAMO, M ;

SETAKA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04) :L183-L185

[7] SCANNING TUNNELING MICROSCOPY STUDY OF DIFFUSION, GROWTH, AND COARSENING OF SI ON SI (001) [J].

MO, YW ;

KARIOTIS, R ;

SWARTZENTRUBER, BS ;

WEBB, MB ;

LAGALLY, MG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01) :201-206

[8] INTERPLAY OF MONOHYDRIDE PHASE AND A NEWLY DISCOVERED DIHYDRIDE PHASE IN CHEMISORPTION OF H ON SI(100)2X1 [J].

SAKURAI, T ;

HAGSTRUM, HD .

PHYSICAL REVIEW B, 1976, 14 (04) :1593-1596

[9] ELECTRICAL CHARACTERISTICS OF METAL CONTACTS TO BORON-DOPED DIAMOND EPITAXIAL FILM [J].

SHIOMI, H ;

NAKAHATA, H ;

IMAI, T ;

NISHIBAYASHI, Y ;

FUJIMORI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (05) :758-762

[10] EPITAXIAL-GROWTH OF HIGH-QUALITY DIAMOND FILM BY THE MICROWAVE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION METHOD [J].

SHIOMI, H ;

TANABE, K ;

NISHIBAYASHI, Y ;

FUJIMORI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (01) :34-40

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