共 22 条
- [1] ION PROBE ANALYSIS OF INDIUM-TIN OXIDE INDIUM-PHOSPHIDE JUNCTIONS [J]. SOLAR ENERGY MATERIALS, 1979, 1 (3-4): : 249 - 255
- [2] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1023 - 1030
- [3] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991
- [4] ACCEPTOR EXCITED-STATES IN INDIUM-PHOSPHIDE [J]. SOLID STATE COMMUNICATIONS, 1979, 32 (05) : 379 - 384
- [5] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296
- [7] HARSHA KSS, 1977, APPL PHYS LETT, V30, P645
- [9] HOVEL HJ, 1975, SEMICONDUCT SEMIMET, V2, P166