BRAOD-BAND EQUIVALENT-CIRCUIT DETERMINATION OF GUNN DIODES

被引：7

作者：

PENCE, IW

KHAN, PJ

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1970年 / MT18卷 / 11期

关键词：

D O I：

10.1109/TMTT.1970.1127354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：784 / +

页数：1

共 25 条

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[2] SELF-PUMPED GUNN-EFFECT PARAMETRIC AMPLIFIER [J].

AITCHISON, CS ;

CORBEY, CD ;

NEWTON, BH .

ELECTRONICS LETTERS, 1969, 5 (02) :36-+

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BREHM, GE ;

MAO, S .

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[7] MICROWAVE NEGATIVE CONDUCTANCE OF BULK GAAS [J].

HAKKI, BW ;

BECCONE, JP .

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[8] PHASE-LOCKED GAAS CW MICROWAVE OSCILLATORS [J].

HAKKI, BW ;

BECCONE, JP ;

PLAUSKI, SE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :197-+

[9] MICROWAVE CIRCUIT CHARACTERISTICS OF BULK GAAS OSCILLATORS [J].

HANSON, DC ;

ROWE, JE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :469-+

[10] SOME PROPERTIES OF GUNN-EFFECT OSCILLATIONS IN A BICONICAL CAVITY [J].

HOBSON, GS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :526-+

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