CONFIRMATION OF THE ELECTRON-PARAMAGNETIC-RES IDENTIFICATION OF CR-4+3D2 IN P-TYPE CR-DOPED GAAS BY MEANS OF APPLIED UNIAXIAL-STRESS

被引：16

作者：

KREBS, JJ

STAUSS, GH

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.26.2296

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2296 / 2297

页数：2

共 10 条

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[7] NEW ELECTRON-PARAMAGNETIC-RES DATA AND PHOTOINDUCED CHANGES IN GAAS-CR - REINTERPRETATION OF THE 2ND-ACCEPTOR STATE AS CR-4+
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[8] Watkins G. D., 1962, B AM PHYS SOC, V7, P29
[9] WATKINS GD, COMMUNICATION
[10] NEW ELECTRON-PARAMAGNETIC-RES DATA FOR CHROMIUM IN ELECTRON-IRRADIATED P-TYPE GAAS - THE OBSERVATION OF CR COMPLEXES
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