NEW ELECTRON-PARAMAGNETIC-RES DATA FOR CHROMIUM IN ELECTRON-IRRADIATED P-TYPE GAAS - THE OBSERVATION OF CR COMPLEXES

被引：7

作者：

WHITEHOUSE, JE

GOSWAMI, NK

NEWMAN, RC

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 06期

关键词：

D O I：

10.1088/0022-3719/14/6/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L139 / L144

页数：6

共 12 条

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[8] NEW ELECTRON-PARAMAGNETIC-RES DATA AND PHOTOINDUCED CHANGES IN GAAS-CR - REINTERPRETATION OF THE 2ND-ACCEPTOR STATE AS CR-4+
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[10] Watkins G. D., 1965, RAD DAMAGE SEMICONDU, P97