NEW ELECTRON-PARAMAGNETIC-RES DATA AND PHOTOINDUCED CHANGES IN GAAS-CR - REINTERPRETATION OF THE 2ND-ACCEPTOR STATE AS CR-4+

被引：45

作者：

STAUSS, GH

KREBS, JJ

LEE, SH

SWIGGARD, EM

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.22.3141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：3141 / 3143

页数：3

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