SWITCHING CHARACTERISTICS OF HYDROGENATED AMORPHOUS-SILICON CRYSTALLINE SILICON HETEROJUNCTION DEVICES

被引：13

作者：

CHEN, YW

FANG, YK

LEE, HD

CHANG, CY

机构：

[1] Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Cheng Kung University, Tainan

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 11期

关键词：

D O I：

10.1063/1.102607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new structure of a three-terminal hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction switching device is successfully developed. The device can be controlled by a gate bias. The switching voltage, holding voltage, and switching current all increase with an increase of undoped a-Si:H thickness. The electrical characteristics and switching phenomena of this device are discussed.

引用

页码：1034 / 1036

页数：3

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