A NEW SHIFT AND RATIO METHOD FOR MOSFET CHANNEL-LENGTH EXTRACTION

被引：175

作者：

TAUR, Y

ZICHERMAN, DS

LOMBARDI, DR

RESTLE, PJ

HSU, CH

HANAFI, HI

WORDEMAN, MR

DAVARI, B

SHAHIDI, GG

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 05期

关键词：

D O I：

10.1109/55.145049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new "shift and ratio" (S&R) method for extracting MOSFET channel length is presented. In this method, channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results. It is shown to yield more accurate and consistent channel lengths for deep-submicrometer CMOS devices at room and low temperatures. It is also found that, for both nFET and pFET, the source-drain resistance is essentially independent of temperature from 300 to 77 K.

引用

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页码：267 / 269

页数：3

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