共 11 条
[1]
HIGH-PERFORMANCE (ALAS/N-GAAS SUPERLATTICE) GAAS 2DEGFETS WITH STABILIZED THRESHOLD VOLTAGE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1984, 23 (08)
:L654-L656
[2]
ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1983, 22 (10)
:L627-L629
[4]
DX CENTER-LIKE TRAP IN SELECTIVELY SI-DOPED ALAS/GAAS SUPERLATTICES
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1986, 25 (05)
:L349-L352
[5]
EFFECT OF GROWTH-CONDITIONS ON STOICHIOMETRY IN MBE-GROWN GAAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:753-755
[6]
KOBAYASHI K, 1986, MATER RES SOC S P, V56, P61