NEW PARAMAGNETIC CENTERS AT SI-SIO2 INTERFACES BY PHOTOCONDUCTIVE RESONANCE

被引：6

作者：

MENDZ, G

HANEMAN, D

机构：

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 33卷 / 06期

关键词：

D O I：

10.1016/0038-1098(80)90746-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：657 / 661

页数：5

共 13 条

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[7] INVESTIGATION OF PASSIVATION MECHANISM IN SILICON SURFACES BY ELECTRON-SPIN RESONANCE [J].

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[8]

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SHIOTA I, 1974, JPN J APPL PHYS PT 2, V2, P417

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Tiller H.-J., 1977, Kristall und Technik, V12, P743, DOI 10.1002/crat.19770120711

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