SIMOX WITH EPITAXIAL SILICON - POINT-DEFECTS AND POSITIVE CHARGE

We use Electron Paramagnetic Resonance (EPR), capacitance-voltage (CV) and point contact transistor measurements to investigate the radiation response of the SIMOX substrate emphasizing the difference between those samples with and without an epitaxial Si layer. We will show that the hydrogen present during epitaxial deposition is responsible for a ten-fold increase in radiation induced defects. Furthermore, our measurements indicate that the density of positive charge and oxygen vacancy related defects (E' centers) typically associated with this charge are not correlated in the case of hydrogen treated buried oxides. A model for E' generation in epitaxial SIMOX will be developed based on the known influence of hydrogen and lack of positive charge creation. Results of etch back measurements will be briefly addressed.