OPERATION AND DYNAMICS OF ZNSE/ZNMGSSE DOUBLE-HETEROSTRUCTURE BLUE LASER-DIODE AT ROOM-TEMPERATURE

被引：34

作者：

OKUYAMA, H

KATO, E

ITOH, S

NAKAYAMA, N

OHATA, T

ISHIBASHI, A

机构：

[1] Sony Corporation Research Center, Hodogaya, Yokohama 240

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.114120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature operation of ZnSe-active-layer double heterostructure laser diode has succeeded. The lasing wavelength was 471 nm. The emission energy shift with the increasing current is explained by the band filling and the band shrinkage. The threshold carrier density is calculated to be 4×1018 cm-3. The mechanism of the stimulated emission of II-VI double heterostructure laser diode is concluded to be the recombination of the electron-hole plasma.© 1995 American Institute of Physics.

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页码：656 / 658

页数：3

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