ANALYSIS OF THRESHOLD CURRENT-DENSITY OF CDZNSE/ZNSSE STRAINED WELL LASERS

被引：5

作者：

KURAMOTO, M ^{[1
]}

CHONG, TC ^{[1
]}

KIKUCHI, A ^{[1
]}

KISHINO, K ^{[1
]}

机构：

[1] SOPHIA UNIV,FAC SCI & TECHNOL,DEPT ELECT ELECTR ENGN,7-1 KIOI CHO,CHIYODA KU,TOKYO 102,JAPAN

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 14期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930842

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold current density (J(th)) of blue-green CdZnSe/ZnSSe strained quantum well lasers is analysed using the laser theory established for III-V semiconductor lasers. Very good agreement between theory and the reported experimental J(th) values is obtained over a wide temperature range from 77 to 273 K. The optimal Cd composition of a CdZnSe single quantum well active layer for obtaining a low J(th) value at room temperature is in the range 0.25-0.30.

引用

页码：1260 / 1262

页数：3

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