INTERFACE STRUCTURES IN GAAS/AL(GA)AS QUANTUM-WELLS CONTROLLED BY METALORGANIC VAPOR-PHASE EPITAXY AND MOLECULAR-BEAM EPITAXY

被引：6

作者：

INOUE, N

IKUTA, K

SHINOHARA, M

OSAKA, J

机构：

[1] NTT LSI Laboratories, Atsugi, Kanagawa

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00553-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Quantum wells were grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) with the growth modes of step propagation, 2D nucleation and a combination of both. The surface structure on the multilayer was characterized by atomic force microscopy (AFM). Photoluminescence (PL) spectra from quantum wells with such well controlled and characterized interfaces were obtained for the first time. PL linewidths were explained by the observed surface structures and growth modes.

引用

页码：379 / 383

页数：5

共 4 条

[1] MORPHOLOGY ON GAAS-SURFACES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND MOLECULAR-BEAM EPITAXY [J].