GROWTH ANISOTROPY IN GAN-AL2O3 SYSTEM

被引:30
作者
MADAR, R [1 ]
MICHEL, D [1 ]
JACOB, G [1 ]
BOULOU, M [1 ]
机构
[1] ELECTR & PHYS APPL LAB,F-94450 LIMEIL BREVANNES,FRANCE
关键词
D O I
10.1016/0022-0248(77)90011-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:239 / 252
页数:14
相关论文
共 31 条
[11]  
LIU JK, 1975, J APPL PHYS, V9, P3703
[12]   HIGH-PRESSURE SOLUTION GROWTH OF GAN+ [J].
MADAR, R ;
JACOB, G ;
HALLAIS, J ;
FRUCHART, R .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :197-203
[13]  
MANASEVIT HM, 1965, T METALL SOC AIME, V233, P540
[14]  
MANASEVIT HM, 1968, T METALL SOC AIME, V242, P465
[15]  
MANSASEVIT HM, 1971, J ELECTROCHEM SOC SO, V118, P1864
[16]   PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].
MARUSKA, HP ;
TIETJEN, JJ .
APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&
[17]   PREPARATION OF EPITAXIAL GALLIUMNITRIDE-II [J].
NICKL, JJ ;
JUST, W ;
BERTINGER, R .
MATERIALS RESEARCH BULLETIN, 1975, 10 (10) :1097-1104
[18]  
Nishizawa J.-I., 1972, Journal of Crystal Growth, V13-14, P297, DOI 10.1016/0022-0248(72)90173-X
[19]  
NOLDER R, 1965, T METALL SOC AIME, V233, P549
[20]  
Pankove J. I., 1973, Journal of Luminescence, V6, P54, DOI 10.1016/0022-2313(73)90094-X