A SELF-ALIGNED COSI2 INTERCONNECTION AND CONTACT TECHNOLOGY FOR VLSI APPLICATIONS

被引：71

作者：

VANDENHOVE, L

WOLTERS, R

MAEX, K

DEKEERSMAECKER, RF

DECLERCK, GJ

机构：

[1] CATHOLIC UNIV LEUVEN,ESAT LAB,B-3030 HEVERLE,BELGIUM

[2] PHILIPS RES LABS,SCI STAFF,5600 JA EINDHOVEN,NETHERLANDS

来源：

关键词：

D O I：

10.1109/T-ED.1987.22963

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：554 / 561

页数：8

共 17 条

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS
ALPERIN, ME
HOLLAWAY, TC
HAKEN, RA
GOSMEYER, CD
KARNAUGH, RV
PARMANTIE, WD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 141 - 149
[2] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS
DHEURLE, FM
PETERSSON, CS
[J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297
[3] ELECTRICAL-PROPERTIES OF COMPOSITE EVAPORATED SILICIDE POLYSILICON ELECTRODES
KOBURGER, C
ISHAQ, M
GEIPEL, HJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1307 - 1312
[4] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714
[5] LIU R, 1986, MAY WORKSH REFR MET
[6] Loh W. M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P586
[7] LUCCHESE CJ, 1982, P ELECTROCHEM SOC M, V827, P232
[8] Maex K., 1986, Proceedings of the Fifth International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon 1986, P346
[9] AN IMPROVED TEST STRUCTURE AND KELVIN-MEASUREMENT METHOD FOR THE DETERMINATION OF INTEGRATED-CIRCUIT FRONT CONTACT RESISTANCE
MAZER, JA
LINHOLM, LW
SAXENA, AN
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 440 - 443
[10] MURARKA SP, 1980, SILICIDES VLSI APPLI