FABRICATION OF BOND AND ETCH-BACK SILICON ON INSULATOR USING A STRAINED SI0.7GE0.3 LAYER AS AN ETCH STOP

Bond and etch-back silicon on insulator was fabricated using a strain-selective etch and a novel etch stop consisting of a strained Si0.7Ge0.3 layer deposited by molecular beam epitaxy. The process was used to fabricate a 200–350 nm silicon layer on insulator. A 350-nm silicon film on insulator fabricated by this technique was very lightly p-type with a carrier density of less than 1015 cm−3. © 1990, The Electrochemical Society, Inc. All rights reserved.