PHOTOREFLECTANCE MEASUREMENT OF STRAIN IN EPITAXIAL GAAS ON SILICON

被引：20

作者：

DIMOULAS, A ^{[1
]}

TZANETAKIS, P ^{[1
]}

GEORGAKILAS, A ^{[1
]}

GLEMBOCKI, OJ ^{[1
]}

CHRISTOU, A ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.344913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The valence-band splitting due to strain in molecular-beam epitaxially grown GaAs on Si has been observed by photoreflectance. The strain has been obtained from the valence-band splitting and was found to be in agreement with results obtained by x-ray rocking curve measurements, photoluminescence, and Raman spectroscopy. The temperature dependence of the strain has also been measured and found to be in agreement with thermal expansion effects.

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页码：4389 / 4392

页数：4

相关论文

共 25 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].

ASPNES, DE .

SURFACE SCIENCE, 1973, 37 (01) :418-442

[3]

BASSANI F, 1966, SEMICONDUCT SEMIMET, V1, P21

[4] ELECTROREFLECTANCE AND PHOTOREFLECTANCE STUDY OF THE SPACE-CHARGE REGION IN SEMICONDUCTORS - (IN-SN-O)/INP AS A MODEL SYSTEM [J].

BHATTACHARYA, RN ;

SHEN, H ;

PARAYANTHAL, P ;

POLLAK, FH ;

COUTTS, T ;

AHARONI, H .

PHYSICAL REVIEW B, 1988, 37 (08) :4044-4050

[5] PHOTOREFLECTANCE CHARACTERIZATION OF OMVPE GAAS ON SI [J].

BOTTKA, N ;

GASKILL, DK ;

GRIFFITHS, RJM ;

BRADLEY, RR ;

JOYCE, TB ;

ITO, C ;

MCINTYRE, D .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :481-486

[6] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J].

CHANDRASEKHAR, M ;

POLLAK, FH .

PHYSICAL REVIEW B, 1977, 15 (04) :2127-2144

[7] TEMPERATURE EFFECTS ON THE PHOTOLUMINESCENCE OF GAAS GROWN ON SI [J].

CHEN, Y ;

FREUNDLICH, A ;

KAMADA, H ;

NEU, G .

APPLIED PHYSICS LETTERS, 1989, 54 (01) :45-47

[8] ELASTIC-CONSTANTS OF GAAS FROM 2 K TO 320 K [J].

COTTAM, RI ;

SAUNDERS, GA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (13) :2105-2118

[9]

HAMAKAWA Y, 1976, OPTICAL PROPERTIES S, P259

[10] CHARACTERIZATION OF GAAS FILM GROWN ON SI SUBSTRATE BY PHOTOLUMINESCENCE AT 77-K [J].

HUANG, Y ;

YU, PY ;

LEE, H ;

WANG, S .

APPLIED PHYSICS LETTERS, 1988, 52 (07) :579-581