PHYSICAL AND CHEMICAL-PROPERTIES OF SI-SIO2 TRANSITION REGIONS

被引:15
作者
SUGANO, T
机构
关键词
D O I
10.1016/0039-6028(80)90486-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:145 / 153
页数:9
相关论文
共 26 条
  • [1] SI-SIO2 INTERFACE EXAMINED BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
    BLANC, J
    BUIOCCHI, CJ
    ABRAHAMS, MS
    HAM, WE
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 120 - 122
  • [2] BLANC J, 1978, SEMICONDUCTOR CHARAC, P139
  • [3] ESCA STUDY OF OXIDE AT SI-SIO2 INTERFACE
    CLARKE, RA
    TAPPING, RL
    HOPPER, MA
    YOUNG, L
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1347 - 1350
  • [4] FELDMAN LC, 1978, PHYSICS SIO2 ITS INT, P344
  • [5] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON
    FLITSCH, R
    RAIDER, SI
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 305 - 308
  • [6] EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE
    GRUNTHANER, FJ
    MASERJIAN, J
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2108 - 2112
  • [7] GRUNTHANER FJ, UNPUBLISHED
  • [8] GRUNTHANER FJ, 1978, PHYSICS SIO2 ITS INT, P389
  • [9] LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) OF SIO2-SI INTERFACE
    HARRINGTON, WL
    HONIG, RE
    GOODMAN, AM
    WILLIAMS, R
    [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 644 - 645
  • [10] OBSERVATION OF AN INTERMEDIATE CHEMICAL STATE OF SILICON IN SI-SIO2 INTERFACE BY AUGER SPUTTER PROFILING
    HELMS, CR
    STRAUSSER, YE
    SPICER, WE
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 767 - 769