OBLIQUE DEPOSITION ENHANCED SENSITIVITY IN ELECTRON-BEAM EXPOSED G-GEXSE1-X INORGANIC RESIST

被引：11

作者：

BALASUBRAMANYAM, K ^{[1
]}

RUOFF, AL ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.571213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1374 / 1378

页数：5

共 20 条

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[4]

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[5]

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LEAMY, HJ .

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[8] HOLOGRAPHIC EVALUATION OF RESOLUTION IN AMORPHOUS-CHALCOGENIDE INORGANIC PHOTORESISTS [J].

HOU, TW ;

CHANG, MS .

APPLIED OPTICS, 1979, 18 (11) :1753-1756

[9] NEW APPLICATION OF SE-GE GLASSES TO SILICON MICROFABRICATION TECHNOLOGY [J].

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[10]

PHILLIPS JC, 1980, J NONCRYST SOLIDS, V35, P1085

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