ELECTRICAL-PROPERTIES AND PHOTO-LUMINESCENCE STUDIES OF GE-IMPLANTED GAAS

被引：6

作者：

CHAN, SS ^{[1
]}

MARCYK, GT ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 01期

关键词：

D O I：

10.1007/BF02654910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：213 / 238

页数：26

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