DIATOMIC-COMPLEX DONOR AND ACCEPTOR MODEL FOR GE-DOPED VAPOR-GROWN GAAS

被引：4

作者：

KASANO, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 07期

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D O I：

10.1063/1.325361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4021 / 4030

页数：10

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共 28 条

[1] INFLUENCE OF SURFACE BAND BENDING ON INCORPORATION OF IMPURITIES IN SEMICONDUCTORS - TE IN GAAS
CASEY, HC
PANISH, MB
WOLFSTIRN, KB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (03) : 571 - +
[2] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
CHIANG, SY
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991
[3] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS
DILORENZO, JV
MOORE, GE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1823 - +
[4] ELECTRON SCATTERING MECHANISMS IN N-TYPE EPITAXIAL CAP
EPSTEIN, AS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1611 - &
[5] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY
ETTENBERG, M
KRESSEL, H
GILBERT, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 827 - 831
[6] MEASUREMENT OF LIFETIME OF MINORITY CARRIERS IN SEMICONDUCTORS WITH A SCANNING ELECTRON MICROSCOPE
HIGUCHI, H
TAMURA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (04) : 316 - +
[7] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A): : A866 - &
[8] HILSUM C, 1961, SEMICONDUCTING III V
[9] JORDAN AS, 1974, J APPL PHYS, V8, P3472
[10] AUTODOPING EFFECTS OF GE IN VAPOR-GROWN GAAS1-XPX LAYERS ON GE SUBSTRATES
KASANO, H
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (08) : 913 - 920