TRANSIENTS IN THE DEPOSITION OF SILICON EPITAXIAL-FILMS IN A CVD-REACTOR

被引：17

作者：

REIF, R ^{[1
]}

VANZI, M ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 10期

关键词：

D O I：

10.1149/1.2127215

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2187 / 2193

页数：7

共 11 条

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[8] MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL-FILMS .1. THEORY [J].

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[9] MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL-FILMS .2. COMPARISON OF THEORY AND EXPERIMENT [J].

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[10]

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