TRANSIENT AND STEADY-STATE RESPONSE OF DOPANT SYSTEM OF A SILICON EPITAXIAL REACTOR - TRANSFER-FUNCTION APPROACH

被引：33

作者：

REIF, R ^{[1
]}

KAMINS, TI ^{[1
]}

SARASWAT, K ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,LABS,PALO ALTO,CA 94304

来源：

关键词：

D O I：

10.1149/1.2131311

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1860 / 1866

页数：7

共 21 条

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[7] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 965 - &
[8] KAMINS TI, 1976, OCT FAL M EL SOC LAS, P601
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[J]. CATALYSIS REVIEWS-SCIENCE AND ENGINEERING, 1974, 10 (02): : 139 - 176
[10] LINDMAYER J, 1965, FUNDAMENTALS SEMICON, P107