DETERMINATION OF CARRIER-CARRIER AND CARRIER-PHONON RELAXATION-TIMES FROM ULTRAFAST PHOTOINDUCED ABSORPTION IN AMORPHOUS-SEMICONDUCTORS

被引：6

作者：

FAUCHET, PM

GZARA, K

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1988年 / 148卷 / 01期

关键词：

D O I：

10.1002/pssb.2221480156

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K71 / K85

页数：15

共 13 条

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[4] INITIAL-STAGES OF TRAPPING IN A-SI-H OBSERVED BY FEMTOSECOND SPECTROSCOPY [J].

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[5]

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[8] SUBPICOSECOND CARRIER TRAPPING IN HIGH-DEFECT-DENSITY AMORPHOUS SI AND GAAS [J].

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[9] FEMTOSECOND DYNAMICS OF HIGHLY EXCITED CARRIERS IN ALXGA1-XAS [J].

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APPLIED PHYSICS LETTERS, 1987, 51 (03) :161-163

[10] SUBPICOSECOND SPECTRAL HOLE BURNING DUE TO NON-THERMALIZED PHOTOEXCITED CARRIERS IN GAAS [J].

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