METAL D-LEVEL INDUCED MID-GAP FERMI LEVEL PINNING ON GAAS(110)

被引：6

作者：

MCLEAN, AB

WILLIAMS, RH

MCGILP, JF

机构：

[1] UNIV WALES UNIV COLL CARDIFF,DEPT PHYS,CARDIFF CF1 1XL,S GLAM,WALES

[2] UNIV DUBLIN TRINITY COLL,DEPT PURE & APPL PHYS,DUBLIN 2,IRELAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1252 / 1256

页数：5

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