GAAS GROWTH USING TERTIARYBUTYLARSINE AND TRIMETHYLGALLIUM

被引：50

作者：

LARSEN, CA ^{[1
]}

BUCHAN, NI ^{[1
]}

LI, SH ^{[1
]}

STRINGFELLOW, GB ^{[1
]}

机构：

[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

This work was supportedb y a grant from the US Air Force; C ontracNt o. AFOSR-87-0233T. he authorsw ish to thank AmericanC yanamidC om-pany for supplyingth e tertiarybutylarsine;

D O I：

10.1016/0022-0248(88)90499-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：15 / 19

页数：5

共 10 条

[1] USE OF TERTIARYBUTYLARSINE FOR GAAS GROWTH
CHEN, CH
LARSEN, CA
STRINGFELLOW, GB
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 218 - 220
[2] MOVPE GROWTH OF GAINASSB
CHERNG, MJ
JEN, HR
LARSEN, CA
STRINGFELLOW, GB
LUNDT, H
TAYLOR, PC
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 408 - 417
[3] FROLOV IA, 1977, ZH FIZ KHIM+, V51, P1106
[4] Kochi J.K., 1978, ORGANOMETALLIC MECHA
[5] REACTION-MECHANISMS IN THE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS
LARSEN, CA
BUCHAN, NI
STRINGFELLOW, GB
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 480 - 482
[6] DECOMPOSITION KINETICS OF OMVPE PRECURSORS
LARSEN, CA
STRINGFELLOW, GB
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) : 247 - 254
[7] ONIELL ME, 1982, COMPREHENSIVE ORGANO, V1, P7
[8] RESIDUAL DONORS AND ACCEPTORS IN HIGH-PURITY GAAS AND INP GROWN BY HYDRIDE VPE
SKROMME, BJ
LOW, TS
ROTH, TJ
STILLMAN, GE
KENNEDY, JK
ABROKWAH, JK
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 433 - 457
[9] STEERE NV, 1967, CRC HDB LABORATORY S
[10] TUCK DG, 1982, COMPREHENSIVE ORGANO, V1, P711

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