DEEP STATES IN SILICON-ON-INSULATOR SUBSTRATES PREPARED BY OXYGEN IMPLANTATION USING CURRENT DEEP LEVEL TRANSIENT SPECTROSCOPY

被引：22

作者：

MCLARTY, PK ^{[1
]}

IOANNOU, DE ^{[1
]}

HUGHES, HL ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.100099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：871 / 873

页数：3

共 11 条

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