ELECTRONIC-STRUCTURE OF SI(111)-NISI2(111) A-TYPE AND B-TYPE INTERFACES

被引：21

作者：

OSSICINI, S ^{[1
]}

BISI, O ^{[1
]}

BERTONI, CM ^{[1
]}

机构：

[1] UNIV ROME,DIPARTIMENTO FIS,I-00173 ROME,ITALY

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.42.5735

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The self-consistent electronic properties of the epitaxial Si(111)-NiSi2(111) interfaces are computed for the experimentally observed A- and B-type interface structures. The densities of states projected at the different atomic sites and the two-dimensional band structure provide a detailed analysis of the electronic properties of the silicon-silicide interface. The Schottky-barrier height turns out to be dependent not only on the interface structure, but also on the interface relaxation distance. A critical analysis of existing results is also presented. © 1990 The American Physical Society.

引用

页码：5735 / 5743

页数：9

共 29 条

[1] ILLUSTRATION OF THE LINEAR-MUFFIN-TIN-ORBITAL TIGHT-BINDING REPRESENTATION - COMPACT ORBITALS AND CHARGE-DENSITY IN SI [J].