INFLUENCE OF SURFACE-DEFECTS ON THE CHARACTERISTICS OF HIGH ELECTRON-MOBILITY TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY

被引：13

作者：

NAKAMURA, T

NANBU, K

ISHIKAWA, T

KONDO, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2164 / 2167

页数：4

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[7] ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS [J].

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