EVEN-PARITY LEVELS OF DONORS IN SI

被引：38

作者：

KLEINER, WH

KRAG, WE

机构：

来源：

PHYSICAL REVIEW LETTERS | 1970年 / 25卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.25.1490

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1490 / &

共 17 条

[1]

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AGGARWAL, RL ;

FISHER, P ;

MOURZINE, V ;

RAMDAS, AK .

PHYSICAL REVIEW, 1965, 138 (3A) :A882-&

[3] EFFECT OF UNIAXIAL STRESS ON EXICTATION SPECTRA OF DONORS IN SILICON [J].

AGGARWAL, RL ;

RAMDAS, AK .

PHYSICAL REVIEW, 1965, 137 (2A) :A602-&

[4] OPTICAL ABSORPTION SPECTRA OF ARSENIC AND PHOSPHORUS IN SILICON [J].

BICHARD, JW ;

GILES, JC .

CANADIAN JOURNAL OF PHYSICS, 1962, 40 (10) :1480-&

[5] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[6] ABSORPTION SPECTRUM OF BISMUTH-DOPED SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (04) :315-317

[7] THEORY OF DONOR STATES IN SILICON [J].

KOHN, W ;

LUTTINGER, JM .

PHYSICAL REVIEW, 1955, 98 (04) :915-922

[8] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].

KOHN, W .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320

[9]

KRAG W, UNPUBLISHED

[10]

KRAG WE, 1970, B AM PHYS SOC, V15, P279

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