RAMAN-SCATTERING CHARACTERIZATION OF THE CRYSTALLINE QUALITIES OF ZNSE FILMS GROWN ON S-PASSIVATED GAAS(100) SUBSTRATES

被引：14

作者：

WANG, J ^{[1
]}

LIU, XH ^{[1
]}

LI, ZS ^{[1
]}

SU, RZ ^{[1
]}

LING, Z ^{[1
]}

CAI, WZ ^{[1
]}

HOU, XY ^{[1
]}

WANG, X ^{[1
]}

机构：

[1] NE FORESTRY UNIV,DEPT PHYS,HARBIN 150040,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 14期

关键词：

D O I：

10.1063/1.115072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparative study of the Raman spectra of ZnSe films grown by molecular beam epitaxy on GaAs(100) substrates passivated by (NH4)(2))S-x and S2Cl2 solutions is presented. Based on the analysis of the line shape of the first-order longitudinal-optical phonon of ZnSe with spatial correlation model of Raman scattering, it is shown that the ZnSe films grown on the GaAs substrates passivated by S2Cl2 solutions have longer coherence lengths, which indicate that their crystalline qualities are batter than those passivated by (NH4)(2)S-x solutions. In addition, the barrier heights of ZnSe/GaAs interfaces for different S passivations have been obtained from the ratios of the intensity of the coupled longitudinal-optical phonon-plasmon mode to that of the longitudinal-optical mode of GaAs Raman peak. The results show that the ZnSe/GaAs samples passivated by S(2)C(l)2 solutions have lower density of interfacial states. (C) 1995 American Institute of Physics.

引用

页码：2043 / 2045

页数：3

共 24 条

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