A METAL-INSULATOR-SILICON JUNCT+ON SEAL

被引：15

作者：

SCHNEER, GH

VANGELDE.W

HAUSER, VE

SCHMIDT, PF

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 05期

关键词：

D O I：

10.1109/T-ED.1968.16180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：290 / +

页数：1

共 11 条

[1]

BERGH AA, 1966, OCT EL SOC M PHIL

[2]

DALTON JV, 1966, MAY SOC M CLEV OH

[3] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J].

DOO, VY ;

NICHOLS, DR ;

SILVEY, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1279-&

[4] MICROELECTRONICS [J].

HITTINGER, WC ;

SPARKS, M .

SCIENTIFIC AMERICAN, 1965, 213 (05) :56-+

[5]

HOLSCHWANDNER LH, 1966, 5 ANN S PHYS FAIL EL

[6]

IWERSEN JE, 1962, IRE T ELECTRON DEV, VED9, P474

[7] BEAM-LEAD TECHNOLOGY [J].

LEPSELTE.MP .

BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (02) :233-&

[8] CONVERSION OF SILICON NITRIDE FILMS TO ANODIC SIO2 [J].

SCHMIDT, PF ;

WONSIDLE.DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (06) :603-&

[9] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].

SNOW, EH ;

GROVE, AS ;

DEAL, BE ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1664-&

[10] ETCHING OF SILICON NITRIDE IN PHOSPHORIC ACID WITH SILICON DIOXIDE AS A MASK [J].

VANGELDER, W ;

HAUSER, VE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) :869-+

← 1 2 →