SI-ION IMPLANTATION IN GAAS AND ALXGA1-XAS

被引：11

作者：

ADACHI, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.341157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：64 / 67

页数：4

共 17 条

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[8] EXISTENCE OF DEEP ACCEPTORS IN GA-IMPLANTED AND B-IMPLANTED GAAS AFTER CLOSE-CONTACT ANNEALING [J].

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[10]

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