ELECTRONIC-STRUCTURE OF IDEAL AND RELAXED INSB(110) SURFACES

被引:19
作者
SCHMEITS, M [1 ]
MAZUR, A [1 ]
POLLMANN, J [1 ]
机构
[1] UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
关键词
D O I
10.1016/0038-1098(81)90256-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1081 / 1084
页数:4
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共 17 条
[1]   ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION AT CLEAVAGE SURFACE OF ZINCBLENDE COMPOUNDS [J].
CALANDRA, C ;
MANGHI, F ;
BERTONI, CM .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (11) :1911-1927
[2]   INTRINSIC SURFACE STATES IN 3-5 COMPOUNDS [J].
CALANDRA, C ;
SANTORO, G .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (02) :L51-L54
[3]   (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082
[4]   SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1977, 16 (02) :790-796
[6]   SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION FOR THE RELAXED (110) SURFACE OF GAAS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1979, 20 (10) :4150-4159
[7]   RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].
EASTMAN, DE ;
FREEOUF, JL .
PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1624-1627
[8]   ELEMENTARY PREDICTION OF LINEAR COMBINATION OF ATOMIC ORBITALS MATRIX-ELEMENTS [J].
FROYEN, S ;
HARRISON, WA .
PHYSICAL REVIEW B, 1979, 20 (06) :2420-2422
[9]   IDEAL (111), (110) AND (100) SURFACES OF SI, GE AND GAAS - COMPARISON OF THEIR ELECTRONIC-STRUCTURE [J].
IVANOV, I ;
MAZUR, A ;
POLLMANN, J .
SURFACE SCIENCE, 1980, 92 (2-3) :365-384
[10]   GAP STATES AT CLEAVED INSB(110) SURFACES [J].
KREUTZ, EW ;
RICKUS, E ;
SOTNIK, N .
SURFACE SCIENCE, 1980, 95 (01) :257-268