ELECTROLYTIC PROCESSES FOR ETCHING AND METAL-DEPOSITION TOWARDS NANOMETER QUANTUM STRUCTURES

被引:8
作者
GRUB, A
RICHTER, R
HARTNAGEL, HL
机构
[1] Technische Hochschule Darmstadt, Institut für Hochfrequenztechnik, 6100 Darmstadt
关键词
GALLIUM ARSENIDE; NANOTECHNOLOGY; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I
10.1049/el:19910193
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
New processes of etching and metal deposition in the submicron range have been developed by using electrolytic solutions. Etching of towers and ridges with dimensions of less than 300 nm out of a GaAs substrate is achieved. Similarly, submicron metallisation with dots and lines of less than 100 nm in size is demonstrated by direct electrolytical writing using an STM-type sharp needle point. Both processes appear to be promising for the realisation and further development of mesoscopic devices.
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页码:306 / 307
页数:2
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