USE OF AU-IN-PD AND PD-IN ELECTROLESS DEPOSITS FOR OHMIC CONTACTS ON N-GAAS

被引：21

作者：

STREMSDOERFER, G ^{[1
]}

MARTIN, JR ^{[1
]}

CLECHET, P ^{[1
]}

NGUYENDU ^{[1
]}

机构：

[1] ECOLE CENT LYON,MET STRUCT LAB,F-69131 ECULLY,FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 01期

关键词：

D O I：

10.1149/1.2086378

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Codeposition of gold-palladium-indium and palladium-indium alloys onto n-GaAs substrates is obtained in an acidic medium by the electroless method. The preparation and characteristics of the different baths are presented. For the Pd-In alloys, a crystalline refractory Pd(In)3 compound is initially formed, whereas after a 2 min annealing treatment at 470°C traces of InAs and PdGa are found. A high-quality ohmic contact having p = 6.10-6Ω cm2 is obtained with annealing. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：256 / 259

页数：4

共 18 条

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