DIRECT WRITING OF SUBMICRON AU-LINES ON GAAS IN AN ELECTROLYTE

被引：7

作者：

RICHTER, R

HARTNAGEL, HL

机构：

[1] Institut für Hochfrequenztechnik, Technische Hochschule Darmstadt, Darmstadt, 6100, Merckstraße

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1990年 / 69卷 / 05期

关键词：

D O I：

10.1080/00207219008920348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With a simple set-up using a glass-insulated tungsten tip dipped into an electrolyte (as is typical for scanning tunnelling microscopy) we succeeded in writing Au-lines on n-GaAs by application of 1ms voltage pulses. So far, the smallest lines measured 250nm in width and 80nm in height, but these dimensions are expected to be further improved. © 1990 Taylor & Francis Ltd.

引用

页码：631 / 634

页数：4

共 7 条

[1] ONE-DIMENSIONAL ELECTRONIC SYSTEMS IN ULTRAFINE MESA-ETCHED SINGLE AND MULTIPLE QUANTUM WELL WIRES [J].