REVISED MODEL OF ASYMMETRIC P-N-JUNCTIONS

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[3] DASH S, 1970, SILICON DEVICE PROCE, P202

[4] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[5] KANE EO, 1963, PHYS REV, V131, P70

[6] DIFFUSED JUNCTION DEPLETION LAYER CALCULATIONS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (02): : 389 - 403

[7] LINDMAYER J, 1965, FUNDAMENTALS SEMICON, P107

[8] Lindmayer J, 1973, COMSAT TECH REV, V3, P1

[9] MECHANISM OF PERFORMANCE LIMITATIONS IN HEAVILY DOPED SILICON DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 531 - 533

[10] EFFECT OF AUGER RECOMBINATION ON EMITTER INJECTION EFFICIENCY OF BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (01) : 25 - 27

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[3] DASH S, 1970, SILICON DEVICE PROCE, P202

[4] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[5] KANE EO, 1963, PHYS REV, V131, P70

[6] DIFFUSED JUNCTION DEPLETION LAYER CALCULATIONS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (02): : 389 - 403

[7] LINDMAYER J, 1965, FUNDAMENTALS SEMICON, P107

[8] Lindmayer J, 1973, COMSAT TECH REV, V3, P1

[9] MECHANISM OF PERFORMANCE LIMITATIONS IN HEAVILY DOPED SILICON DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 531 - 533

[10] EFFECT OF AUGER RECOMBINATION ON EMITTER INJECTION EFFICIENCY OF BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (01) : 25 - 27