ELECTRON TUNNELLING INTO AMORPHOUS GERMANIUM AND SILICON

被引：12

作者：

SMITH, CW

CLARK, AH

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(72)90251-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：207 / &

共 18 条

[1] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS
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[2] ELECTRON TUNNELING BETWEEN A METAL AND A SEMICONDUCTOR - CHARACTERISTICS OF AL-AL2O3-SNTE AND -GETE JUNCTIONS
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STILES, PJ
ESAKI, L
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) : 4440 - &
[3] STRUCTURAL, ELECTRICAL, AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM FILMS
CHOPRA, KL
BAHL, SK
[J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2545 - &
[4] ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM
CLARK, AH
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 750 - &
[5] Duke C. B., 1969, TUNNELING SOLIDS
[6] INELASTIC ELECTRON TUNNELING IN AL-AL-OXIDE-METAL SYSTEMS
GEIGER, AL
CHANDRASEKHAR, BS
ADLER, JG
[J]. PHYSICAL REVIEW, 1969, 188 (03): : 1130 - +
[7] OPTICAL CONSTANTS OF AMORPHOUS SILICON FILMS NEAR MAIN ABSORPTION EDGE
GRIGOROVICI, R
VANCU, A
[J]. THIN SOLID FILMS, 1968, 2 (1-2) : 105 - +
[8] HILDEBRAND FB, 1952, METHODS APPLIED MATH, P426
[9] HILDEBRAND FB, 1952, METHODS APPLIED MATH, P439
[10] TUNNELING INTO AMORPHOUS GERMANIUM FILMS
NWACHUKU, A
KUHN, M
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (05) : 163 - &